ssm6p05fu 2000-07-19 1/4 toshiba field effect transistor silicon p channel mos type s s m 6 p 0 5 f u power management switch high speed switching applications ? small package ? low on resistance : r on = 3.3 ? (max) (@v gs = ? 4 v) : r on = 4.0 ? (max) (@v gs = ? 2.5 v) ? low gate threshold voltage maximum ratings (ta = = = = 25c) (q1, q2 common) characteristics symbol rating unit drain-source voltage v ds ? 20 v gate-source voltage v gss 12 v dc i d ? 200 drain current pulse i dp ? 400 ma drain power dissipation (ta = 25c) p d (note1) 300 mw channel temperature t ch 150 c storage temperature range t stg ? 55~150 c note1: total rating, mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 0.32 mm 2 6) handling precaution when handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in g eneral can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibi lity of th e buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, a nd to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury o r damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in th e most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handlin g guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfun ction o r failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energ y control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion cont rol instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this docume n t shall be made at the customer?s own risk. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assume d b y toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from i ts use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation o r others. ? the information contained herein is subject to change without notice. 000707 eaa1
ssm6p05fu 2000-07-19 2/4 marking equivalent circuit (top view) electrical characteristics (ta = = = = 25c) (q1, q2 common) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 12 v, v ds = 0 ? ? 1 a drain-source breakdown voltage v (br) dss i d = ? 1 ma, v gs = 0 ? 20 ? ? v drain cut-off current i dss v ds = ? 20 v, v gs = 0 ? ? ? 1 a gate threshold voltage v th v ds = ? 3 v, i d = ? 0.1 ma ? 0.6 ? ? 1.1 v forward transfer admittance ? y fs ? v ds = ? 3 v, i d = ? 50 ma (note2) 100 ? ? ms i d = ? 100 ma, v gs = ? 4 v (note2) ? 2.1 3.3 drain-source on resistance r ds (on) i d = ? 50 ma, v gs = ? 2.5 v (note2) ? 3.2 4.0 ? input capacitance c iss ? 27 ? pf reverse transfer capacitance c rss ? 7 ? pf output capacitance c oss v ds = ? 3 v, v gs = 0, f = 1 mhz ? 21 ? pf turn-on time t on ? 70 ? switching time turn-off time t off v dd = ? 3 v, i d = ? 50 ma, v gs = 0~ ? 2.5 v ? 70 ? ns note2: pulse test switching time test circuit (q1, q2 common) precaution v th can be expressed as voltage between gate and source when low operating current value is i d = ? 100 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consideration for using the device. v gs recommended voltage of ? 2.5 v or higher to turn on this product. (c) v out v dd = ? 3 v duty < = 1% v in : t r , t f < 5 ns (z out = 50 ? ) common source ta = 25 c v dd out in 0 ? 2.5 v 10 s 50 ? r l (b) v in t on 90% 10% ? 2.5 v 0 v 90% 10% t off t r t f v ds ( on ) v dd (a) test circuit d h 6 5 4 1 2 3 q1 q2 6 5 4 1 2 3
ssm6p05fu 2000-07-19 3/4 (q1, q2 common) drain-source on resistance r ds (on) ( ? ) drain-source on resistance r ds (on) ( ? ) drain-source voltage v ds (v) i d ? v ds drain current i d (ma) gate-source voltage v gs (v) i d ? v gs drain current i d (ma) drain current i d (ma) r ds (on) ? i d drain-source on resistance r ds (on) ( ? ) gate-source voltage v gs (v) r ds (on) ? v gs ambient temperature ta ( c) r ds (on) ? ta drain current i d (ma) ? y fs ? ? i d forward transfer admittance ? y fs ? (ms) 0 0 ? 0.5 ? 1.0 ? 1.5 ? 2.0 ? 100 ? 200 ? 300 ? 400 ? 500 common source ta = 25 c v gs = ? 1.5 v ? 1.7 ? 1.9 ? 2.1 ? 2.3 ? 2.5 ? 3 ? 4 ? 10 0 0 ? 100 ? 200 ? 300 ? 400 ? 500 1 2 3 4 5 6 common source ta = 25 c v gs = ? 4 v ? 2.5 v 0 0 ? 2 ? 4 ? 6 ? 8 ? 10 1 2 3 4 5 6 common source i d = ? 50 ma ta = 100 c 25 c ? 25 c 0 ? 25 0 25 50 75 100 125 150 1 2 3 4 5 6 common source v gs = ? 4 v, i d = ? 100 ma ? 2.5 v, ? 50 ma 30 ? 10 ? 30 ? 50 ? 100 ? 300 ? 500 ? 1000 50 100 300 500 1000 common source v ds = ? 3 v ta = 25 c ? 0.01 0 ? 0.5 ? 1.0 ? 1.5 ? 2.0 ? 2.5 ? 3.0 ? 0.1 ? 1 ? 10 ? 100 ? 1000 common source v ds = ? 3 v ta = 100 c ? 25 c 25 c
ssm6p05fu 2000-07-19 4/4 (q1, q2 common) drain power dissipation p d * (mw) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (ma) drain-source voltage v ds (v) c ? v ds capacitance c (pf) drain current i d (ma) t ? i d switching time t (ns) ambient temperature ta ( c) p d * ? ta * : total rating 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ? 100 ? 200 ? 300 ? 400 ? 500 common source v gs = 0 ta = 25 c i dr g d s 1 ? 0.1 ? 0.3 ? 1 ? 3 ? 10 ? 30 3 5 10 30 50 100 common source v gs = 0 f = 1 mhz ta = 25 c c iss c oss c rss 10 ? 1 ? 3 ? 10 ? 30 ? 100 ? 300 30 50 100 300 500 1000 common source v dd = ? 3 v v gs = 0~ ? 2.5 v ta = 25 c t off t f t on t r 0 0 20 40 60 80 100 120 140 160 100 200 300 400 mounted on fr4 board. (25.4 mm 25.4 mm 1.6 t cu pad: 0.32 mm 2 6)
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